Record 11.7 W/mm Continuous Wave Output Power in X-band AlN-buffer HEMTs
Power amplifiers (PAs) using HEMTs with aluminum nitride (AlN) buffer layers promise superior thermal performance over the current generation of GaN-buffer HEMT PAs. However, the continuous-wave (CW) output power densities from AlN-buffer HEMTs have b
Authors
- Austin Hickman (ORCID: https://orcid.org/0000-0002-6762-1405)
- Reet Chaudhuri (ORCID: https://orcid.org/0000-0002-6562-4506)
- Kazuki Nomoto
- Huili Grace Xing (ORCID: https://orcid.org/0000-0002-2709-3839)
- Debdeep Jena
- Shankar Miller-Murthy
- Aryan Goli
Institutions
- Kyocera (United States) (US)
- RINI Technologies (United States) (US)
Publication Details
- Published
- 2025-08-29
- DOI
- https://doi.org/10.36227/techrxiv.175648148.82454190/v1
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation