High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal–insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with one of the highest average breakdown fields of 5.3 MV/cm (a breakdown voltage of >260 V) with an associated maximum current density of 342 mA/mm and a cutoff frequency of 9.1 GHz. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation of high-power radio frequency applications.
Authors
- Hridibrata Pal
- Seungheon Shin
- Tomás Palacios (ORCID: https://orcid.org/0000-0002-2190-563X)
- Siddharth Rajan (ORCID: https://orcid.org/0000-0003-4241-3391)
- Andrew Armstrong (ORCID: https://orcid.org/0000-0003-0391-6009)
- Brianna Klein (ORCID: https://orcid.org/0000-0001-5844-2440)
- Chandan Joishi (ORCID: https://orcid.org/0000-0001-8456-4839)
- John Niroula (ORCID: https://orcid.org/0009-0007-2786-3526)
- Yinxuan Zhu
- Andrew A. Allerman
- Jerry W. Pratt
Institutions
- Sandia National Laboratories (US)
- The Ohio State University (US)
- Massachusetts Institute of Technology (US)
Publication Details
- Journal
- APL Electronic Devices
- Published
- 2025-08-29
- DOI
- https://doi.org/10.1063/5.0276718
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 3.77
Funders
- U.S. Department of Energy
- U.S. Army Combat Capabilities Development Command
- Army Research Office
- Sandia National Laboratories