A Co(II)‐Based One‐Dimensional Coordination Polymer: Fabrication of Schottky Barrier Diode and Understanding of the Semiconductor‐Type Through Integration of Barrier Potential

Abstract These days, implementation of any material in the development of electronic devices is regarded as one of the most pivotal applications. Not only is the advancement of efficient electronic devices technologically valuable to contemporary civilization, but it also has laboratory‐to‐land implementations. In light of the aforementioned issues, a 1D Co‐based coordination polymer, [Co(4‐bpd)(3‐mba) 2 ] n ( 1 ) (4‐bpd stands for 1,4‐bis(4‐pyridyl)‐2,3‐diaza‐1,3‐butadiene and 3‐mba stands for 3‐methylbenzoate anion) has been synthesized and thoroughly characterised. The semiconducting nature of the material was revealed by estimating the optical band‐gap (3.25 eV) from absorption spectral studies. The current‐voltage characteristic of the ITO/[Co(4‐bpd)(3‐mba) 2 ] n /Al arrangement was found to be of nonlinear rectifying ensuring its Schottky diode nature. The theoretical analysis of the carrier transport dynamics using the characteristic I‐V reveals the electrical conductivity (2.41 × 10 −6 S cm −1 ) and the barrier potential height (1.38 eV) developed within metal‐material interface. The HOMO‐LUMO energy positions and the barrier potential integrated Fermi energy level of [Co(4‐bpd)(3‐mba) 2 ] n , (very near to the HOMO energy level) confirm the material to be acceptor or p‐type semiconductor. The conductivity of [Co(4‐bpd)(3‐mba) 2 ] n within the Schottky device was observed to be superior compared to several previously reported cobalt‐based coordination complexes as well as some earlier reported coordination polymers.