Nanoscale Positioning and In Situ Enhancement of Single G Center in Silicon Using a Fluorescence-Localization Technique

Silicon-based semiconductor nanofabrication technology has achieved a remarkable level of sophistication and maturity, and color centers in silicon naturally inherit this advantage. Besides, their emissions appear in telecommunication bands, which makes them play a crucial role in the construction of a quantum network. To address the challenge of weak spontaneous emission, different optical cavities are fabricated to enhance the emission rate. However, the relative location between cavity and emitter is random, which greatly reduces the success probability of enhancement. Here, we report on a fluorescence-localization technique (FLT) for precisely locating a single G center in silicon and embedding it in the center of a circular Bragg grating cavity in situ, achieving 240-times improvement of the success probability. We observe a 30-fold enhancement of luminescence, 2.5-fold acceleration of the emission from a single G center, corresponding to a Purcell factor exceeding 11. Our findings pave the way for large-scale integration of quantum light sources.

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Publication Details

Journal
ACS Photonics
Published
2025-08-29
DOI
https://doi.org/10.1021/acsphotonics.5c01247
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Nanoscale Positioning and In Situ Enhancement of Single G Center in Silicon Using a Fluorescence-Localization Technique

Wei Liu, Chuan‐Feng Li, Lin-Ke Xie, Yuhang Ma et al.
ACS Photonics
Photonic and Optical Devices
article

Nanoscale Positioning and In Situ Enhancement of Single G Center in Silicon Using a Fluorescence-Localization Technique

Wei Liu, Chuan‐Feng Li, Lin-Ke Xie, Yuhang Ma, Xiaodong Zeng, Nai‐Jie Guo, Haifei Lu, Zhaoan Wang, Yi‐Tao Wang, Jing Ren, Junyou Liu, Yaqi Wu, Guang‐Can Guo, Jian-Shun Tang, C.H. Ao
article en

Abstract

Silicon-based semiconductor nanofabrication technology has achieved a remarkable level of sophistication and maturity, and color centers in silicon naturally inherit this advantage. Besides, their emissions appear in telecommunication bands, which makes them play a crucial role in the construction of a quantum network. To address the challenge of weak spontaneous emission, different optical cavities are fabricated to enhance the emission rate. However, the relative location between cavity and emitter is random, which greatly reduces the success probability of enhancement. Here, we report on a fluorescence-localization technique (FLT) for precisely locating a single G center in silicon and embedding it in the center of a circular Bragg grating cavity in situ, achieving 240-times improvement of the success probability. We observe a 30-fold enhancement of luminescence, 2.5-fold acceleration of the emission from a single G center, corresponding to a Purcell factor exceeding 11. Our findings pave the way for large-scale integration of quantum light sources.

ACS PhotonicsVol. 12(9)
University of Science and Technology of China (CN), Anhui University (CN), Wuhan University of Technology (CN), Hefei University (CN), Quantum (Australia) (AU), Beijing Academy of Quantum Information Sciences (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Natural Science Foundation of Anhui Province
Openalex Percentile: Top 78%
Photonic and Optical Devices
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