FORMATION AND TYPES OF DEEP ENERGY LEVELS DEFECTS IN SEMICONDUCTORS

The article is devoted to defects with deep energy levels in semiconductors, their formation and influence on the properties of materials. The mechanisms of occurrence of such defects, including impurities, defect complexes are considered. The types of defects (acceptor, donor, recombination centers) and their influence on recombination, breakdown of p-n junctions and temperature stability are described.

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Publication Details

Published
2025-06-15
DOI
https://doi.org/10.21667/978-5-7722-0424-5-91-95
Primary Topic
Silicon and Solar Cell Technologies
Type
article
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FORMATION AND TYPES OF DEEP ENERGY LEVELS DEFECTS IN SEMICONDUCTORS

Dmitry Goryachkin, V. G. Litvinov
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Silicon and Solar Cell Technologies
article

FORMATION AND TYPES OF DEEP ENERGY LEVELS DEFECTS IN SEMICONDUCTORS

Dmitry Goryachkin, V. G. Litvinov
article en

Abstract

The article is devoted to defects with deep energy levels in semiconductors, their formation and influence on the properties of materials. The mechanisms of occurrence of such defects, including impurities, defect complexes are considered. The types of defects (acceptor, donor, recombination centers) and their influence on recombination, breakdown of p-n junctions and temperature stability are described.

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Silicon and Solar Cell Technologies
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FORMATION AND TYPES OF DEEP ENERGY LEVELS DEFECTS IN SEMICONDUCTORS — Dmitry Goryachkin, V. G. Litvinov · (2025) | TGRS Research Map | TGRS