INVESTIGATION OF THE TOPOLOGICAL FEATURES OF THIN POROUS SILICON FILMS FORMED BY THE ANODIC ELECTROCHEMICAL ETCHING METHOD

Semiconductor structures Ag/por-Si/n-Si are of interest for use as active substrates enabling the effect of surface-enhanced Raman scattering (SERS). This study presents the methodologies for the formation of Ag/n-Si, Ag/por-Si/n-Si, and por-Si/n-Si structures, including electrochemical etching of porous silicon and chemical deposition of silver. An analysis of the morphological characteristics of the obtained structures was carried out, including profile distribution and surface roughness, as well as an investigation of the interface parameters of por-Si/silicon substrate using atomic force microscopy.