RESEARCH OF ELECTRON-ELECTRON INTERACTIONS IN LOW-DIMENSION SEMICONDUCTORS QUANTUM STRUCTURES

The paper considers a joint solution of the Schrodinger and Poisson equations for a two-dimensional semiconductor heterojunction. The application of a triangular approximation of a potential well for calculating the electron-electron interaction time is substantiated. Various types of electron-electron interactions for a heavily doped heterojunction are considered. Analytical temperature dependences of the electron-electron interaction time in a heavily doped heterojunction are obtained.

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Publication Details

Published
2025-06-15
DOI
https://doi.org/10.21667/978-5-7722-0424-5-134-141
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
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article

RESEARCH OF ELECTRON-ELECTRON INTERACTIONS IN LOW-DIMENSION SEMICONDUCTORS QUANTUM STRUCTURES

A. S. Safoshkin, A. B. Dubois, D.D. Artemiev
Semiconductor Quantum Structures and Devices
article

RESEARCH OF ELECTRON-ELECTRON INTERACTIONS IN LOW-DIMENSION SEMICONDUCTORS QUANTUM STRUCTURES

A. S. Safoshkin, A. B. Dubois, D.D. Artemiev
article en

Abstract

The paper considers a joint solution of the Schrodinger and Poisson equations for a two-dimensional semiconductor heterojunction. The application of a triangular approximation of a potential well for calculating the electron-electron interaction time is substantiated. Various types of electron-electron interactions for a heavily doped heterojunction are considered. Analytical temperature dependences of the electron-electron interaction time in a heavily doped heterojunction are obtained.

Openalex Percentile: Top 83%
Semiconductor Quantum Structures and Devices
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RESEARCH OF ELECTRON-ELECTRON INTERACTIONS IN LOW-DIMENSION SEMICONDUCTORS QUANTUM STRUCTURES — A. S. Safoshkin, A. B. Dubois, et al. · (2025) | TGRS Research Map | TGRS