ASSESSMENT OF THE POSITION OF DONOR AND ACCEPTOR LEVELS IN PHASE-CHANGING MATERIALS OF THE GST SYSTEM

. An analysis of the temperature dependence of electrical conductivity within the framework of a simplified model of the density of states distribution has shown that the position of deep donors and acceptors in the materials of the GeTe-Sb2Te3 system plays a key role. These levels affect the concentration and mobility of charge carriers in amorphous and crystalline states of a semiconductor, which allows for a deeper understanding of the physics of phase transition materials. In the amorphous state, deep levels localize charge carriers, increasing resistance. Understanding the influence of deep levels on electrophysical properties helps optimize the use of these materials in high-speed and energy-efficient devices such as phase-change memory and optoelectronic components.