Unveiling Spin Selective Mechanism toward Very Large Spin Signals in Black Phosphorus 2D Semiconductor Spintronics Devices

Discovering an efficient spintronic semiconductor workhorse with dual host capabilities as a channel and spin valve barrier remains one of the most elusive endeavors toward the development of spin-logic circuits. Graphene paved the way for two-dimensional (2D) materials, yet engineering a controlled band gap in it remains a challenge. Black phosphorus (BP) was recently unveiled as a potential candidate in the realm of 2D semiconductors, with carrier mobilities among the largest reported for a 2D material and a low spin-orbit coupling reminiscent of graphene. Although promising spin transport properties have already been reported, their potential for tunneling and spin injection remains uncharted. Here, we unveil an unknown spin transport mechanism spin-split in k-space and report on corresponding high magnetoresistance spin signals up to 500% in BP based spin valves. Those findings are analyzed and discussed in light of a first-principles theoretical investigation showing BP's potential for spin filtering beyond its expected role of spin transport channel. This strongly supports BP's vision as an outstanding platform for spintronics, as it could become a versatile workhorse yet unavailable with any other semiconductor.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-08-28
DOI
https://doi.org/10.1021/acsami.5c07758
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Unveiling Spin Selective Mechanism toward Very Large Spin Signals in Black Phosphorus 2D Semiconductor Spintronics Devices

Étienne Gaufrès, Simon M.‐M. Dubois, Florian Godel, F. Pétroff et al.
ACS Applied Materials & Interfaces
2D Materials and Applications
article

Unveiling Spin Selective Mechanism toward Very Large Spin Signals in Black Phosphorus 2D Semiconductor Spintronics Devices

Étienne Gaufrès, Simon M.‐M. Dubois, Florian Godel, F. Pétroff, Pierre Brus, Marta Galbiati, Frédéric Fossard, Regina Galceran, Jean‐Sébastien Mérot, Victor Zatko, Etienne Carré, Julian Peiro, Annick Loiseau, Bruno Dlubak, Marie‐Blandine Martin, Wei Hao, Pierre Sénéor, Jean-Christophe Charlier
article en

Abstract

Discovering an efficient spintronic semiconductor workhorse with dual host capabilities as a channel and spin valve barrier remains one of the most elusive endeavors toward the development of spin-logic circuits. Graphene paved the way for two-dimensional (2D) materials, yet engineering a controlled band gap in it remains a challenge. Black phosphorus (BP) was recently unveiled as a potential candidate in the realm of 2D semiconductors, with carrier mobilities among the largest reported for a 2D material and a low spin-orbit coupling reminiscent of graphene. Although promising spin transport properties have already been reported, their potential for tunneling and spin injection remains uncharted. Here, we unveil an unknown spin transport mechanism spin-split in k-space and report on corresponding high magnetoresistance spin signals up to 500% in BP based spin valves. Those findings are analyzed and discussed in light of a first-principles theoretical investigation showing BP's potential for spin filtering beyond its expected role of spin transport channel. This strongly supports BP's vision as an outstanding platform for spintronics, as it could become a versatile workhorse yet unavailable with any other semiconductor.

ACS Applied Materials & InterfacesVol. 17(36)
Universitat de València (ES), Université Paris-Saclay (FR), Thales (Australia) (AU), Laboratoire Albert Fert (FR), Yukhnovskii Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine (UA), Laboratoire d'Étude des Microstructures (FR), Thales (France) (FR), UCLouvain (BE)
European Commission, Agence Nationale de la Recherche
Openalex Percentile: Top 83%
2D Materials and Applications
DOIOpen Access PDFOpenAlex
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