Efficient quantum transport simulations in nanodevices using multi-band discontinuous Galerkin methods

Abstract As interest in advanced nanodevices grows, incorporating interband coupling effects becomes crucial for obtaining accurate and physically meaningful results when analyzing transport phenomena. This study presents a novel approach that combines the multi-band envelope function model with the discontinuous Galerkin method, resulting in an efficient algorithm tailored for simulating interband kinetics. Our method achieves a relative $$L^\infty$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msup> <mml:mi>L</mml:mi> <mml:mi>∞</mml:mi> </mml:msup> </mml:math> error that is $$40\;$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mn>40</mml:mn> <mml:mspace/> </mml:mrow> </mml:math> % lower than traditional finite difference schemes while maintaining comparable runtime. Furthermore, numerical experiments confirm the improved convergence behavior of the proposed algorithm, particularly for simulations of resonant interband tunneling diodes.

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Publication Details

Journal
Journal of Computational Electronics
Published
2025-08-28
DOI
https://doi.org/10.1007/s10825-025-02398-z
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

Efficient quantum transport simulations in nanodevices using multi-band discontinuous Galerkin methods

Dirk Schulz, Valmir Ganiu
Journal of Computational Electronics
Advancements in Semiconductor Devices and Circuit Design
article

Efficient quantum transport simulations in nanodevices using multi-band discontinuous Galerkin methods

Dirk Schulz, Valmir Ganiu
article en

Abstract

Abstract As interest in advanced nanodevices grows, incorporating interband coupling effects becomes crucial for obtaining accurate and physically meaningful results when analyzing transport phenomena. This study presents a novel approach that combines the multi-band envelope function model with the discontinuous Galerkin method, resulting in an efficient algorithm tailored for simulating interband kinetics. Our method achieves a relative $$L^\infty$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msup> <mml:mi>L</mml:mi> <mml:mi>∞</mml:mi> </mml:msup> </mml:math> error that is $$40\;$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mn>40</mml:mn> <mml:mspace/> </mml:mrow> </mml:math> % lower than traditional finite difference schemes while maintaining comparable runtime. Furthermore, numerical experiments confirm the improved convergence behavior of the proposed algorithm, particularly for simulations of resonant interband tunneling diodes.

Journal of Computational ElectronicsVol. 24(5)
TU Dortmund University (DE)
Deutsche Forschungsgemeinschaft, Technische Universität Dortmund
Openalex Percentile: Top 78%
Advancements in Semiconductor Devices and Circuit Design
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