Current Status of Bulk β-Ga₂O₃ and β-(AlxGa₁-ₓ)₂O₃ Crystal Growth

β-Ga2O3 and its solid solutions –@-(AlxGa1-x)2O3 are considered as potential candidate materials for next generation power devices due to their ultra-wide bandgaps (4.85.5.6 eV) and large breakdown electric field (.8 MVcm-1). Wafers prepared from bulk crystals constitute a foundation in a device fabrication chain. The present report briefly discusses thermodynamics, challenges in growing bulk crystals from the melt by different methods, which enable at least 2-inch diameter wafers, crystal structural quality, electrical properties, and factors affecting crystal growth costs.