Localized redox filament formation in biopolymer-based RRAM devices for in-memory volatile molecule sensing
Memristors and resistive random-access memory (RRAM) utilize a range of active ions, material compositions, and structural designs, each influencing switching performance in different ways.
Authors
- You Seung Rim (ORCID: https://orcid.org/0000-0002-4281-8818)
- Mohammad Tauquir Alam Shamim Shaikh
- Kyong Jae Kim (ORCID: https://orcid.org/0009-0004-9378-9342)
- Hyojung Kim (ORCID: https://orcid.org/0000-0002-2995-8058)
Institutions
- Sejong University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01887k
- Primary Topic
- Analytical Chemistry and Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.00