Luminescence and radiation response of Al2O3:Sb

A review of the literature on previous attempts to engineer the luminescence of Al 2 O 3 for radiation dosimetry is presented followed by the investigation of Sb 3+ as a new recombination center for Al 2 O 3 . Materials were prepared by solution combustion synthesis, calcined in air at 1050 o C, and characterized by X-ray diffraction (XRD) and Raman spectroscopy. They were determined to be single alpha phase up to a Sb concentration of 0.5 mol% when the gamma phase was also observed. Luminescence under X-ray excitation showed the presence of an intense band around 411-423 nm, depending on the Sb concentration, not observed in undoped Al 2 O 3 . Under excitation at 343 nm, the photoluminescence lifetime was estimated to be ∼11 μs. The lifetime together with the thermal quenching behavior demonstrated this band not to be from F centers and the emission was attributed to Sb 3+ . Sb-doped Al 2 O 3 exhibited both optically stimulated (OSL) and thermoluminescence (TL) responses. The OSL initial intensity was nearly 5x more intense than undoped Al 2 O 3 . TL results indicated high sensitivity and showed a linear response to the irradiation dose at least up to 3 Gy. • Pioneer investigation of the luminescence of Sb 3+ in Al 2 O 3 . • Investigation of the ionizing radiation response of Sb-doped Al 2 O 3 . • Analysis of the thermal quenching of Sb-doped Al 2 O 3 .

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Publication Details

Journal
Journal of Luminescence
Published
2025-08-28
DOI
https://doi.org/10.1016/j.jlumin.2025.121504
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
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article

Luminescence and radiation response of Al2O3:Sb

E.G. Yukihara, Luiz G. Jacobsohn, Linyu Pan
Journal of Luminescence
Luminescence Properties of Advanced Materials
article

Luminescence and radiation response of Al2O3:Sb

E.G. Yukihara, Luiz G. Jacobsohn, Linyu Pan
article en

Abstract

A review of the literature on previous attempts to engineer the luminescence of Al 2 O 3 for radiation dosimetry is presented followed by the investigation of Sb 3+ as a new recombination center for Al 2 O 3 . Materials were prepared by solution combustion synthesis, calcined in air at 1050 o C, and characterized by X-ray diffraction (XRD) and Raman spectroscopy. They were determined to be single alpha phase up to a Sb concentration of 0.5 mol% when the gamma phase was also observed. Luminescence under X-ray excitation showed the presence of an intense band around 411-423 nm, depending on the Sb concentration, not observed in undoped Al 2 O 3 . Under excitation at 343 nm, the photoluminescence lifetime was estimated to be ∼11 μs. The lifetime together with the thermal quenching behavior demonstrated this band not to be from F centers and the emission was attributed to Sb 3+ . Sb-doped Al 2 O 3 exhibited both optically stimulated (OSL) and thermoluminescence (TL) responses. The OSL initial intensity was nearly 5x more intense than undoped Al 2 O 3 . TL results indicated high sensitivity and showed a linear response to the irradiation dose at least up to 3 Gy. • Pioneer investigation of the luminescence of Sb 3+ in Al 2 O 3 . • Investigation of the ionizing radiation response of Sb-doped Al 2 O 3 . • Analysis of the thermal quenching of Sb-doped Al 2 O 3 .

Journal of LuminescenceVol. 288
Paul Scherrer Institute (CH), Clemson University (US)
National Science Foundation
Openalex Percentile: Top 83%
Luminescence Properties of Advanced Materials
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