Sb2S3 indoor photovoltaics with a charge-transport-layer-free sandwich-structure
Indoor photovoltaics (IPVs) attract tremendous attention for powering low-power electronics through harvesting light energy from indoor ambient environments. Sb2S3 is a promising IPV light-harvesting material with a theoretical power conversion efficiency (PCE) exceeding 47% under white LED (WLED) illumination. Here, we report a simple charge-transport-layer-free (CTL-free) sandwich-structure for Sb2S3 solar cells, featuring an innovative fluorine-doped tin oxide/Sb2S3/Au configuration that eliminates traditional planar heterojunction components like the commonly used CdS electron transport layer and Spiro-OMeTAD hole transport layer. Leveraging close-spaced sublimation technology combined with a seed-mediated two-step deposition strategy, high-quality Sb2S3 absorber layers with preferential [hk1] crystallographic orientations, compact surface morphology, and suppressed interfacial defects were obtained, confirmed by systematic structural, morphological, band structure, and transient spectroscopy characterization. Benefitting from the favorable charge-carrier transport and collection, the as-obtained CTL-free Sb2S3 solar cells yield an impressive PCE of 5.24% under 3000 K 1000 lux WLED illumination with superior long-term performance stability. This work reveals the possibility of designing CTL-free antimony chalcogenide solar cells with decent device efficiencies as well as the great potential for acting as indoor energy harvesting for sustainable Internet of Things systems.
Authors
- Ru Zhou (ORCID: https://orcid.org/0000-0002-8010-4875)
- Wei Dang (ORCID: https://orcid.org/0009-0007-8001-614X)
- J. Fei
- Zhiqiang Li (ORCID: https://orcid.org/0000-0003-2835-5906)
- Zhihao Chen (ORCID: https://orcid.org/0000-0002-5573-5237)
- Qiang Xie (ORCID: https://orcid.org/0000-0001-8397-3024)
- Lei Wan (ORCID: https://orcid.org/0000-0002-3051-7890)
- Wentao Wu (ORCID: https://orcid.org/0009-0007-0120-6472)
- Y.C. Chen
Institutions
- Hefei University of Technology (CN)
- Hebei University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-08-25
- DOI
- https://doi.org/10.1063/5.0285020
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities