Highly Stretchable Synaptic Transistors Based On Phase-Separated P3HT–SEBS Networks for Adaptative Neuromorphic Computation

Recent advancements in organic electronics highlight the potential of stretchable organic field-effect transistors for neuromorphic applications. However, maintaining a high electrical performance under mechanical strain remains a critical challenge. Here, we present a stretchable organic synaptic transistor with a phase-separating method. By blending poly(3-hexylthiophene) (P3HT) with styrene–ethylene–butylene–styrene (SEBS), P3HT–SEBS phase-separated films were obtained that combine high mechanical stretchability with good charge transport property. The organic synaptic transistors (OSTs) were able to withstand a mechanical strain of greater than 80%. Remarkably, by combining SEBS-induced stress dissipation with ionic gel-driven synaptic modulation, the OSTs were able to mimic synaptic dynamics under strain, facilitating neurobiological behaviors. Our work addresses the critical need for strain-resilient organic devices in next-generation human–machine collaboration.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-08-27
DOI
https://doi.org/10.1021/acsaelm.5c01357
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

Highly Stretchable Synaptic Transistors Based On Phase-Separated P3HT–SEBS Networks for Adaptative Neuromorphic Computation

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ACS Applied Electronic Materials
Advanced Memory and Neural Computing
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Highly Stretchable Synaptic Transistors Based On Phase-Separated P3HT–SEBS Networks for Adaptative Neuromorphic Computation

Junbiao Peng, Jiayi Pan, Huimin Su, Jintao Xu, Yutian Liu, Baozhong Chen, Yang Lü, Jiale Huang, Linfeng Lan, Qi Zhou, Bo Huang, Shanshan Gong, Jiajun Lin
article en

Abstract

Recent advancements in organic electronics highlight the potential of stretchable organic field-effect transistors for neuromorphic applications. However, maintaining a high electrical performance under mechanical strain remains a critical challenge. Here, we present a stretchable organic synaptic transistor with a phase-separating method. By blending poly(3-hexylthiophene) (P3HT) with styrene–ethylene–butylene–styrene (SEBS), P3HT–SEBS phase-separated films were obtained that combine high mechanical stretchability with good charge transport property. The organic synaptic transistors (OSTs) were able to withstand a mechanical strain of greater than 80%. Remarkably, by combining SEBS-induced stress dissipation with ionic gel-driven synaptic modulation, the OSTs were able to mimic synaptic dynamics under strain, facilitating neurobiological behaviors. Our work addresses the critical need for strain-resilient organic devices in next-generation human–machine collaboration.

ACS Applied Electronic MaterialsVol. 7(17)
Japan Display (Japan) (JP), Advanced Materials and Devices (United States) (US), University of Hong Kong (HK), South China University of Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 79%
Advanced Memory and Neural Computing
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