In Situ OBIC Mapping to Investigate Native Defect Dynamics in GaInN/GaN-Based Light-Emitting Diodes

Native defects significantly impair the electro-optical performance of GaInN/GaN-based light-emitting diodes (LEDs). Therefore, precise characterization of their properties, such as energy levels, capture kinetics, capture cross-sections, and spatial distributions, is crucial for understanding their physical origins following improvement in performance. However, modeling the impact of various defects on the electrical and optical characteristics of LEDs still remains a complex challenge. This study proposes a laser-based measurement technique for the accurate localization and screening of defects in GaInN/GaN-based LEDs by establishing a correlation model between laser excitation and defect response, which enables real-time monitoring of defect dynamics during device degradation, while simultaneously evaluating the effects of the defect state dynamics on the electro-optical characteristics of LED devices. The experimental results indicate that defects located at different spatial positions lead to distinct degradation mechanisms.