Transfer-free growth of wafer-level graphene <i>via</i> a Mo sacrificer
This study presents a straightforward method to allow transfer-free graphene growth on SiO<sub>2</sub>/Si substrates, with Mo serving as a sacrificial layer, which could be easily removed by simple air blowing. Such a route eliminates the need for chemical etching of metal catalysts. The resulting 2-inch graphene wafer shows electrical uniformity and minimal metal residue.
Authors
- Tongbo Wei (ORCID: https://orcid.org/0000-0002-1479-082X)
- Jingyu Sun (ORCID: https://orcid.org/0000-0002-9812-3046)
- Shihao Zhu (ORCID: https://orcid.org/0009-0008-9973-9871)
- Jia Li (ORCID: https://orcid.org/0000-0003-2900-9108)
- Feifan Liu (ORCID: https://orcid.org/0000-0002-2932-8515)
- Zhongfan Liu (ORCID: https://orcid.org/0000-0001-5554-1902)
- Yaqi Gao
- Kaixuan Zhou (ORCID: https://orcid.org/0000-0003-1747-3667)
- Yiming Luo
- Wenze Wei
Institutions
- National University of Defense Technology (CN)
- Chinese Academy of Sciences (CN)
- Soochow University (CN)
- Beijing Graphene Institute (CN)
- Institute of Semiconductors (CN)
Publication Details
- Journal
- Chemical Communications
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5cc04187b
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00