Adaptive Temperature‐Compensation of Charge‐Pump PLL–Based MTJ/CMOS for Frequency Stability

The charge pump phase‐locked loop (CP‐PLL) is a critical component in modern mixed‐signal electronics, widely used for clock generation, synchronization, and frequency synthesis in digital and wireless applications. However, its performance is significantly impacted by nonideal effects, particularly the current mismatch of the charge pump (CP) and the frequency variation of oscillator, both of which are highly sensitive to temperature fluctuations. To address these challenges, this work leverages the positive temperature coefficient (PTC) of the drain‐source on‐state resistance in CMOS and the negative temperature coefficient (NTC) of the magnetic tunnel junction (MTJ). Using 28 nm CMOS technology, we analyze and simulate the current mismatch of the CP across a wide temperature range, achieving a current mismatch of less than 0.3%. Furthermore, the proposed approach significantly improves the frequency stability of the ring oscillator. Simulation results validate the effectiveness of our design, demonstrating that the MTJ compensates for 90% of the output frequency drift over a temperature range from −80 to 125°C.

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Publication Details

Journal
IET Circuits Devices & Systems
Published
2025-01-01
DOI
https://doi.org/10.1049/cds2/1773323
Primary Topic
Advancements in PLL and VCO Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Adaptive Temperature‐Compensation of Charge‐Pump PLL–Based MTJ/CMOS for Frequency Stability

Yingxue Sun, Xiulong Wu, W.W. Tan, Chunyu Peng et al.
IET Circuits Devices & Systems
Advancements in PLL and VCO Technologies
article

Adaptive Temperature‐Compensation of Charge‐Pump PLL–Based MTJ/CMOS for Frequency Stability

Yingxue Sun, Xiulong Wu, W.W. Tan, Chunyu Peng, Yongliang Zhou, Chengxing Dai, Xin Li, Jingxue Zhong
article en

Abstract

The charge pump phase‐locked loop (CP‐PLL) is a critical component in modern mixed‐signal electronics, widely used for clock generation, synchronization, and frequency synthesis in digital and wireless applications. However, its performance is significantly impacted by nonideal effects, particularly the current mismatch of the charge pump (CP) and the frequency variation of oscillator, both of which are highly sensitive to temperature fluctuations. To address these challenges, this work leverages the positive temperature coefficient (PTC) of the drain‐source on‐state resistance in CMOS and the negative temperature coefficient (NTC) of the magnetic tunnel junction (MTJ). Using 28 nm CMOS technology, we analyze and simulate the current mismatch of the CP across a wide temperature range, achieving a current mismatch of less than 0.3%. Furthermore, the proposed approach significantly improves the frequency stability of the ring oscillator. Simulation results validate the effectiveness of our design, demonstrating that the MTJ compensates for 90% of the output frequency drift over a temperature range from −80 to 125°C.

IET Circuits Devices & SystemsVol. 2025(1)
Anhui University (CN), Hefei University of Technology (CN)
National Natural Science Foundation of China, Natural Science Foundation of Anhui Province
Openalex Percentile: Top 79%
Advancements in PLL and VCO Technologies
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Adaptive Temperature‐Compensation of Charge‐Pump PLL–Based MTJ/CMOS for Frequency Stability — Yingxue Sun, Xiulong Wu, et al. · IET Circuits Devices & Systems (2025) | TGRS Research Map | TGRS