Effect of Synthesis Conditions on Graphene Directly Grown on SiO2: Structural Features and Charge Carrier Mobility

Graphene was directly grown on SiO₂/Si substrates using microwave plasma-enhanced chemical vapor deposition (PECVD) to investigate how synthesis-driven variations in structure and doping influence carrier transport. The effects of synthesis temperature, plasma power, deposition time, gas flow, and pressure on graphene's structure and electronic properties were systematically studied. Raman spectroscopy revealed non-monotonic changes in layer number, defect density, and doping levels, reflecting the complex interplay between growth, etching, and self-doping mechanisms. The surface morphology and conductivity were assessed by atomic force microscopy (AFM). Charge carrier mobility, extracted from graphene-based field-effect transistors, showed strong correlations with Raman features, including the intensity ratios and positions of the Two-dimension (2D) and G peaks. Importantly, mobility did not correlate with defect density but was linked to reduced self-doping and a weaker graphene-substrate interaction rather than intrinsic structural disorder. These findings suggest that charge transport in PECVD-grown graphene is predominantly limited by interfacial and doping effects. This study offers valuable insights into the synthesis-structure-property relationship, which is crucial for optimizing graphene for electronic and sensing applications.