Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam

Annealing behaviors of vacancy-type defects in Mg and N-implanted GaN were studied by positron annihilation. The major defect species in as-implanted samples was identified as Ga-vacancy (VGa)-type defects. For Mg-implanted GaN with sequential N-implantation after annealing above 10000C, the defect species were vacancy clusters such as (VGaVN)3. Due to the downward shift of the Fermi level position resulting from a partial activation of Mg, the charge states of defects tended to become positive. For N-implanted GaN, the size of the vacancy cluster started to decrease above 12000C annealing, which was attributed to recombinations between VNs coupled with VGas and excess N atoms. The impact of sequential N-implantations on vacancies in Mg-implanted GaN was found to be most pronounced when the ratio of the concentration of N to that of Mg was three.

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Publication Details

Journal
IEEE Journal of the Electron Devices Society
Published
2025-01-01
DOI
https://doi.org/10.1109/jeds.2025.3603203
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam

Jun Uzuhashi, Masaharu Edo, Shigefusa F. Chichibu, Kohei K. Shima et al.
IEEE Journal of the Electron Devices Society
GaN-based semiconductor devices and materials
article

Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam

Jun Uzuhashi, Masaharu Edo, Shigefusa F. Chichibu, Kohei K. Shima, Shoji Ishibashi, Shinya Takashima, Tadakatsu Ohkubo, Kacper Sierakowski, Michał Boćkowski, Akira Uedono, Ryo Tanaka, Katsunori Ueno
article en

Abstract

Annealing behaviors of vacancy-type defects in Mg and N-implanted GaN were studied by positron annihilation. The major defect species in as-implanted samples was identified as Ga-vacancy (VGa)-type defects. For Mg-implanted GaN with sequential N-implantation after annealing above 10000C, the defect species were vacancy clusters such as (VGaVN)3. Due to the downward shift of the Fermi level position resulting from a partial activation of Mg, the charge states of defects tended to become positive. For N-implanted GaN, the size of the vacancy cluster started to decrease above 12000C annealing, which was attributed to recombinations between VNs coupled with VGas and excess N atoms. The impact of sequential N-implantations on vacancies in Mg-implanted GaN was found to be most pronounced when the ratio of the concentration of N to that of Mg was three.

IEEE Journal of the Electron Devices SocietyVol. 13
University of Tsukuba (JP), Tohoku University (JP), National Institute for Materials Science (JP), Fuji Electric (Japan) (JP), Institute of High Pressure Physics (PL), Polish Academy of Sciences (PL)
Ministry of Education, Culture, Sports, Science and Technology, New Energy and Industrial Technology Development Organization, Japan Society for the Promotion of Science
Openalex Percentile: Top 86%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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