Compact laser amplifier with high gain based on Nd<sup>3+</sup>-doped SrF<sub>2</sub> crystal

Abstract High gain greater than 10 6 is crucial for the preamplifiers of joule-class high-energy lasers. In this work, we present a specially designed compact amplifier using 0.5%Nd,5%Gd:SrF 2 and 0.5%Nd,5%Y:SrF 2 crystals. The irregular crystal shape enhances the gain length of the laser beam and helps suppress parasitic oscillations. The amplified spontaneous emission (ASE) induced by the high gain is analyzed through ray tracing. The balance between gain and ASE is estimated via numerical simulation. The gain spectral characteristics of the two-stage two-pass amplifier are examined, demonstrating the advantages of using different crystals, with bandwidths up to 8 nm and gains over 10 6 . In addition, the temperature and stress distributions in the Nd,Gd:SrF 2 crystal are simulated. This work is expected to contribute to the development of high-peak-power ( $\ge$ terawatt-class) high-energy (joule-class) laser devices.

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Publication Details

Journal
High Power Laser Science and Engineering
Published
2025-01-01
DOI
https://doi.org/10.1017/hpl.2025.26
Citations
1
Primary Topic
Solid State Laser Technologies
Type
article
Field-Weighted Citation Impact
0.73

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Compact laser amplifier with high gain based on Nd3+-doped SrF2 crystal

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Compact laser amplifier with high gain based on Nd3+-doped SrF2 crystal

Fujian Li, Zhen Zhang, Jian Shi, Zhonghan Zhang, Siqi Long, Ruijing He, Jianjun Cao, Yanqi Gao, Tianxiong Zhang, Xianghe Guan, Liangbi Su, Xiaoli Li, Tao Wang, Dong Liu, Yong Cui, Lailin Ji, Zhan Sui, J.-L. Liu, Xiaohui Zhao
article en
1 citations

Abstract

Abstract High gain greater than 10 6 is crucial for the preamplifiers of joule-class high-energy lasers. In this work, we present a specially designed compact amplifier using 0.5%Nd,5%Gd:SrF 2 and 0.5%Nd,5%Y:SrF 2 crystals. The irregular crystal shape enhances the gain length of the laser beam and helps suppress parasitic oscillations. The amplified spontaneous emission (ASE) induced by the high gain is analyzed through ray tracing. The balance between gain and ASE is estimated via numerical simulation. The gain spectral characteristics of the two-stage two-pass amplifier are examined, demonstrating the advantages of using different crystals, with bandwidths up to 8 nm and gains over 10 6 . In addition, the temperature and stress distributions in the Nd,Gd:SrF 2 crystal are simulated. This work is expected to contribute to the development of high-peak-power ( $\ge$ terawatt-class) high-energy (joule-class) laser devices.

High Power Laser Science and EngineeringVol. 13
Jiangnan University (CN), Chinese Academy of Sciences (CN), China Academy of Engineering Physics (CN), Shanghai Institute of Ceramics (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 24%
Solid State Laser Technologies
0.73
DOIOpen Access PDFOpenAlex
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