CFD-Based Optimization of the Growth Zone in an Industrial Ammonothermal GaN Autoclave for Uniform Flow and Temperature Fields
This study presents a computational fluid dynamics (CFD) simulation to investigate fluid flow and heat transfer within the growth zone of gallium nitride crystals synthesized via the alkaline ammonothermal method, with particular emphasis on the influence of seed crystal arrangement and installation geometry. The model analyzes temperature and velocity distributions, highlighting how seed configuration affects turbulent and transitional flow behavior. Key findings demonstrate the effectiveness of CFD in evaluating and optimizing growth zone design. Both simulation and experimental results show that achieving more uniform flow and temperature fields leads to more consistent growth rates and improved structural crystal quality. Furthermore, the study underscores the critical role of installation geometry in shaping flow characteristics such as velocity distribution, temperature gradients, and their transient fluctuations, factors essential for optimizing the ammonothermal crystallization process.
Authors
- Paweł Kempisty (ORCID: https://orcid.org/0000-0003-0700-5560)
- Robert Kucharski (ORCID: https://orcid.org/0000-0002-8984-3543)
- B. Łucznik (ORCID: https://orcid.org/0000-0002-0891-0303)
- Michał Boćkowski (ORCID: https://orcid.org/0000-0003-1616-685X)
- Marek Żak
Institutions
- Institute of High Pressure Physics (PL)
Publication Details
- Journal
- Crystals
- Published
- 2025-08-25
- DOI
- https://doi.org/10.3390/cryst15090754
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- European Commission
- Uniwersytet Warszawski
- Electronic Components and Systems for European Leadership
- Interdyscyplinarne Centrum Modelowania Matematycznego i Komputerowego UW