CFD-Based Optimization of the Growth Zone in an Industrial Ammonothermal GaN Autoclave for Uniform Flow and Temperature Fields

This study presents a computational fluid dynamics (CFD) simulation to investigate fluid flow and heat transfer within the growth zone of gallium nitride crystals synthesized via the alkaline ammonothermal method, with particular emphasis on the influence of seed crystal arrangement and installation geometry. The model analyzes temperature and velocity distributions, highlighting how seed configuration affects turbulent and transitional flow behavior. Key findings demonstrate the effectiveness of CFD in evaluating and optimizing growth zone design. Both simulation and experimental results show that achieving more uniform flow and temperature fields leads to more consistent growth rates and improved structural crystal quality. Furthermore, the study underscores the critical role of installation geometry in shaping flow characteristics such as velocity distribution, temperature gradients, and their transient fluctuations, factors essential for optimizing the ammonothermal crystallization process.

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Publication Details

Journal
Crystals
Published
2025-08-25
DOI
https://doi.org/10.3390/cryst15090754
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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article

CFD-Based Optimization of the Growth Zone in an Industrial Ammonothermal GaN Autoclave for Uniform Flow and Temperature Fields

Paweł Kempisty, Robert Kucharski, B. Łucznik, Michał Boćkowski et al.
1 citations
Crystals
GaN-based semiconductor devices and materials
1.26
article

CFD-Based Optimization of the Growth Zone in an Industrial Ammonothermal GaN Autoclave for Uniform Flow and Temperature Fields

Paweł Kempisty, Robert Kucharski, B. Łucznik, Michał Boćkowski, Marek Żak
article en
1 citations

Abstract

This study presents a computational fluid dynamics (CFD) simulation to investigate fluid flow and heat transfer within the growth zone of gallium nitride crystals synthesized via the alkaline ammonothermal method, with particular emphasis on the influence of seed crystal arrangement and installation geometry. The model analyzes temperature and velocity distributions, highlighting how seed configuration affects turbulent and transitional flow behavior. Key findings demonstrate the effectiveness of CFD in evaluating and optimizing growth zone design. Both simulation and experimental results show that achieving more uniform flow and temperature fields leads to more consistent growth rates and improved structural crystal quality. Furthermore, the study underscores the critical role of installation geometry in shaping flow characteristics such as velocity distribution, temperature gradients, and their transient fluctuations, factors essential for optimizing the ammonothermal crystallization process.

CrystalsVol. 15(9)
Institute of High Pressure Physics (PL)
European Commission, Uniwersytet Warszawski, Electronic Components and Systems for European Leadership, Interdyscyplinarne Centrum Modelowania Matematycznego i Komputerowego UW
Openalex Percentile: Top 18%
GaN-based semiconductor devices and materials
1.26
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CFD-Based Optimization of the Growth Zone in an Industrial Ammonothermal GaN Autoclave for Uniform Flow and Temperature Fields — Paweł Kempisty, Robert Kucharski, et al. · Crystals (2025) | TGRS Research Map | TGRS