Observation of three types of NDR in flexible VOx Mott memristors

In this study, the negative differential resistance (NDR) phenomenon in a flexible VOx Mott memristor has been investigated. Our findings indicate that these memristors can exhibit three NDR phenomena depending on the compliance current conditions. Specifically, under low compliance current, the memristors are forming-free and display a continuous “S-type” NDR1 characteristic. When subjected to high compliance currents, electrical forming occurs, leading to a Mott phase transition and the subsequent emergence of both S-type NDR2 and “snap-back” NDR. Furthermore, while forming-free devices produce stable NDR1, they are unable to generate stable oscillation pulses due to the lack of a fixed low resistance. In contrast, devices that have undergone the forming process can generate stable oscillating pulses with good threshold switching stability exceeding 107 times.

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Publication Details

Journal
Applied Physics Letters
Published
2025-08-25
DOI
https://doi.org/10.1063/5.0272045
Citations
2
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
1.46

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article

Observation of three types of NDR in flexible VOx Mott memristors

P. T. Lai, Weihua Liu, Chuanyu Han, Shiquan Fan et al.
2 citations
Applied Physics Letters
Advanced Memory and Neural Computing
1.46
article

Observation of three types of NDR in flexible VOx Mott memristors

P. T. Lai, Weihua Liu, Chuanyu Han, Shiquan Fan, Li Geng, Juan Hu, Xin Li, Xiaolei Wang, Shujing Zhao
article en
2 citations

Abstract

In this study, the negative differential resistance (NDR) phenomenon in a flexible VOx Mott memristor has been investigated. Our findings indicate that these memristors can exhibit three NDR phenomena depending on the compliance current conditions. Specifically, under low compliance current, the memristors are forming-free and display a continuous “S-type” NDR1 characteristic. When subjected to high compliance currents, electrical forming occurs, leading to a Mott phase transition and the subsequent emergence of both S-type NDR2 and “snap-back” NDR. Furthermore, while forming-free devices produce stable NDR1, they are unable to generate stable oscillation pulses due to the lack of a fixed low resistance. In contrast, devices that have undergone the forming process can generate stable oscillating pulses with good threshold switching stability exceeding 107 times.

Applied Physics LettersVol. 127(8)
Institute of Microelectronics (SG), Institute of Microelectronics (CN), Second Affiliated Hospital of Xi'an Jiaotong University (CN), Xi'an University of Technology (CN), Micro & Nano Research Institute (CN), Xi'an Jiaotong University (CN), University of Hong Kong (HK)
National Natural Science Foundation of China
Openalex Percentile: Top 15%
Advanced Memory and Neural Computing
1.46
DOISourceOpenAlex
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