Emerging low-dimensional perovskite resistive switching memristors: from fundamentals to devices

With the exponential growth of the internet of things, artificial intelligence, and energy-efficient high-volume data digital communications, there is an urgent demand to develop new information technologies with high storage capacity. This needs to address the looming challenge of conventional Von Neumann architecture and Moore's law bottleneck for future data-intensive computing applications. A promising remedy lies in memristors, which offer distinct advantages of scalability, rapid access times, stable data retention, low power consumption, multistate storage capability and fast operation. Among the various materials used for active layers in memristors, low dimensional perovskite semiconductors with structural diversity and superior stability exhibit great potential for next generation memristor applications, leveraging hysteresis characteristics caused by ion migration and defects. In this review the progress of low-dimensional perovskite memory devices is comprehensively summarized. The working mechanism and fundamental processes, including ion migration dynamics, charge carrier transport and electronic resistance that underlies the switching behavior of memristors are discussed. Additionally, the device parameters are analyzed with special focus on the effective methods to improve electrical performance and operational stability. Finally, the challenges and perspective on major hurdles of low-dimensional perovskite memristors in the expansive application domains are provided.