Quantum Dot Photodetector and Laser Monolithically Integrated on Silicon Photonics

III–V quantum dot (QD) photodetectors enable on-chip sensing in the telecommunications O-band with high responsivity and low dark current. We demonstrate for the first time III–V QD photodetectors monolithically integrated with silicon nitride waveguides and III–V QD lasers. III–V QD material is heteroepitaxially grown in pockets on silicon photonics coupons, where it is coprocessed into III–V ridge waveguides serving as both photodetectors and lasers. The photodetectors have a dark current of 250 pA and a responsivity of 0.344 A/W at a –2 V bias. Photodetectors integrated with lasers in a loop configuration correctly measure threshold current and in-waveguide optical power at the few-mW level. This work demonstrates multifunctional III–V devices on the silicon photonics platform, enabling a wider variety of monolithically integrated active components without the need for additional process steps.

Authors

Institutions

Publication Details

Journal
ACS Photonics
Published
2025-08-25
DOI
https://doi.org/10.1021/acsphotonics.5c01299
Citations
3
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
2.19

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Quantum Dot Photodetector and Laser Monolithically Integrated on Silicon Photonics

Rosalyn Koscica, Bei Shi, Michael Zylstra, D.L. Harame et al.
3 citations
ACS Photonics
Photonic and Optical Devices
2.19
article

Quantum Dot Photodetector and Laser Monolithically Integrated on Silicon Photonics

Rosalyn Koscica, Bei Shi, Michael Zylstra, D.L. Harame, Alec M. Skipper, Jonathan Klamkin, Chongxin Zhang, Yuan Liu, John E. Bowers, Joshua L. Herman, Gerald Leake
article en
3 citations

Abstract

III–V quantum dot (QD) photodetectors enable on-chip sensing in the telecommunications O-band with high responsivity and low dark current. We demonstrate for the first time III–V QD photodetectors monolithically integrated with silicon nitride waveguides and III–V QD lasers. III–V QD material is heteroepitaxially grown in pockets on silicon photonics coupons, where it is coprocessed into III–V ridge waveguides serving as both photodetectors and lasers. The photodetectors have a dark current of 250 pA and a responsivity of 0.344 A/W at a –2 V bias. Photodetectors integrated with lasers in a loop configuration correctly measure threshold current and in-waveguide optical power at the few-mW level. This work demonstrates multifunctional III–V devices on the silicon photonics platform, enabling a wider variety of monolithically integrated active components without the need for additional process steps.

ACS PhotonicsVol. 12(9)
University of California, Santa Barbara (US), Office of Critical Minerals and Energy Innovation (US), Arizona Western College (US), Material (Belgium) (BE), Goleta Engineering (United States) (US), Institute for Resource Efficiency and Energy Strategies (DE), Analog Photonics (United States) (US), SUNY Polytechnic Institute (US)
AIM Photonics, Defense Advanced Research Projects Agency, University of California, Santa Barbara, Advanced Research Projects Agency, Air Force Research Laboratory
Openalex Percentile: Top 11%
Photonic and Optical Devices
2.19
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.