Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads

The justification of a system for diagnosing the technical condition of power semiconductor devices, based on the principles of nondestructive testing has been reviewed. An assessment of the current state of protection means for semiconductor products is given. The theoretical foundations forming the basis for the development of such systems are presented, along with the results of experimental studies on a prototype device.

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Publication Details

Journal
Russian Electrical Engineering
Published
2025-05-01
DOI
https://doi.org/10.3103/s1068371225700464
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
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article

Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads

K. M. Yundin, I. K. Sharipov, V. Ya. Khorolsky, A. M. Isupova
Russian Electrical Engineering
Silicon Carbide Semiconductor Technologies
article

Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads

K. M. Yundin, I. K. Sharipov, V. Ya. Khorolsky, A. M. Isupova
article en

Abstract

The justification of a system for diagnosing the technical condition of power semiconductor devices, based on the principles of nondestructive testing has been reviewed. An assessment of the current state of protection means for semiconductor products is given. The theoretical foundations forming the basis for the development of such systems are presented, along with the results of experimental studies on a prototype device.

Russian Electrical EngineeringVol. 96(5)
North-Caucasus Federal University (RU), Don State Technical University (RU), Ufa Institute of Chemistry (RU)
Affordable and clean energy
Openalex Percentile: Top 79%
Silicon Carbide Semiconductor Technologies
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