Epitaxial stabilization and oxygen vacancy control of EuNiO3 thin films

Rare-earth nickelates exhibit valuable behavior for neuromorphic computing at low temperature: Building blocks for biologically inspired microelectronic neurons like electrically driven insulator–metal transitions (IMTs), negative differential resistance, and self-oscillations have been shown up to 230 K for SmNiO3 and NdNiO3. EuNiO3 raises the IMT far above room temperature (460 K) but high-quality thin films are challenging to synthesize. Here, we explore the epitaxial stabilization of EuNiO3 using pulsed laser deposition. X-ray diffraction reciprocal space maps, x-ray absorption spectroscopy, and transmission electron microscopy show that higher growth temperature (800 °C) reduces oxygen vacancy concentrations in EuNiO3. Pseudomorphic EuNiO3 is demonstrated on both SrLaAlO4 and NdGaO3 substrates, and LaNiO3 buffer layers are incorporated to facilitate future vertical device fabrication. In contrast to bulk thermodynamic predictions, the greater oxidation and crystallinity at higher temperature we observe indicates that epitaxial substrates can stabilize EuNiO3 at O2 pressures less than 1 atm.

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Publication Details

Journal
Journal of Applied Physics
Published
2025-08-25
DOI
https://doi.org/10.1063/5.0271577
Primary Topic
Magnetic and transport properties of perovskites and related materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Epitaxial stabilization and oxygen vacancy control of EuNiO3 thin films

Christopher P. Muzzillo, M. Brooks Tellekamp, Olivia D. Schneble, Rebecca W. Smaha et al.
Journal of Applied Physics
Magnetic and transport properties of perovskites and related materials
article

Epitaxial stabilization and oxygen vacancy control of EuNiO3 thin films

Christopher P. Muzzillo, M. Brooks Tellekamp, Olivia D. Schneble, Rebecca W. Smaha, Keon Sahebkar, Michelle A. Smeaton, William A. Callahan, Ryan F. Need, Hirohito Ogasawara, Sang‐Jun Lee
article en

Abstract

Rare-earth nickelates exhibit valuable behavior for neuromorphic computing at low temperature: Building blocks for biologically inspired microelectronic neurons like electrically driven insulator–metal transitions (IMTs), negative differential resistance, and self-oscillations have been shown up to 230 K for SmNiO3 and NdNiO3. EuNiO3 raises the IMT far above room temperature (460 K) but high-quality thin films are challenging to synthesize. Here, we explore the epitaxial stabilization of EuNiO3 using pulsed laser deposition. X-ray diffraction reciprocal space maps, x-ray absorption spectroscopy, and transmission electron microscopy show that higher growth temperature (800 °C) reduces oxygen vacancy concentrations in EuNiO3. Pseudomorphic EuNiO3 is demonstrated on both SrLaAlO4 and NdGaO3 substrates, and LaNiO3 buffer layers are incorporated to facilitate future vertical device fabrication. In contrast to bulk thermodynamic predictions, the greater oxidation and crystallinity at higher temperature we observe indicates that epitaxial substrates can stabilize EuNiO3 at O2 pressures less than 1 atm.

Journal of Applied PhysicsVol. 138(8)
National Laboratory of the Rockies (US), SLAC National Accelerator Laboratory (US), University of Florida (US), Massachusetts Institute of Technology (US)
U.S. Department of Energy, Office of Science, Oak Ridge Institute for Science and Education, Workforce Development for Teachers and Scientists, National Renewable Energy Laboratory
Openalex Percentile: Top 86%
Magnetic and transport properties of perovskites and related materials
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