Phonon-mediated shift currents in twisted bilayer MoS2

Twisted bilayer molybdenum disulfide (MoS2) exhibits significant bulk photovoltaic effects (BPVE) due to its unique moiré superlattice, which introduces nontrivial quantum geometry and modulates the electronic bands. Here, we investigate the mechanisms underlying the BPVE in twisted bilayer MoS2, focusing on the role of phonon-assisted processes. We find that phonon-assisted transitions can mediate a non-zero displacement of electron and hole wave packets, a critical component of shift current. This displacement, driven by the interband Berry connection, leads to a measurable change in the polarization phase of the shift current. Using laser excitation at different wavelengths, we observe variations in the polarization phase during interband excitonic transitions, highlighting the critical role of phonons. Our findings reveal phonon-mediated interband processes and modulation mechanisms of shift vectors, which provide design principles for developing twist-engineered optoelectronic devices with polarization-programmable photoresponse.

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Publication Details

Journal
Applied Physics Letters
Published
2025-08-25
DOI
https://doi.org/10.1063/5.0288528
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Phonon-mediated shift currents in twisted bilayer MoS2

Jinluo Cheng, J. S. Liu, B. Huang, Binghui Li et al.
Applied Physics Letters
2D Materials and Applications
article

Phonon-mediated shift currents in twisted bilayer MoS2

Jinluo Cheng, J. S. Liu, B. Huang, Binghui Li, Shanqing Li, Xiuhua Xie, Yuwei Shan, Hongyu Chen
article en

Abstract

Twisted bilayer molybdenum disulfide (MoS2) exhibits significant bulk photovoltaic effects (BPVE) due to its unique moiré superlattice, which introduces nontrivial quantum geometry and modulates the electronic bands. Here, we investigate the mechanisms underlying the BPVE in twisted bilayer MoS2, focusing on the role of phonon-assisted processes. We find that phonon-assisted transitions can mediate a non-zero displacement of electron and hole wave packets, a critical component of shift current. This displacement, driven by the interband Berry connection, leads to a measurable change in the polarization phase of the shift current. Using laser excitation at different wavelengths, we observe variations in the polarization phase during interband excitonic transitions, highlighting the critical role of phonons. Our findings reveal phonon-mediated interband processes and modulation mechanisms of shift vectors, which provide design principles for developing twist-engineered optoelectronic devices with polarization-programmable photoresponse.

Applied Physics LettersVol. 127(8)
South China Normal University (CN), Chinese Academy of Sciences (CN), Changchun Institute of Optics, Fine Mechanics and Physics (CN), Shanghai Advanced Research Institute (CN), Shanghai Institute of Applied Physics (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 83%
2D Materials and Applications
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