Channel-Type Engineering in an InSe-Based Transistor: Paving a Way for Next-Generation Reconfigurable Electronics
Achieving reversible n/p-type switching in two-dimensional semiconductors is crucial for reconfigurable nanoelectronic devices. Here, we demonstrate a fully reversible channel-type conversion in InSe-based transistors via ultraviolet-ozone oxidation and thermal annealing, enabling stable bidirectional polarity switching. Electrical, spectroscopic, and microscopic analyses reveal that the reversible-type conversion originates from the intercalation and elimination of oxygen in layered InSe. Density functional theory confirms that oxygen intercalation introduces electron states above the valence band maximum, leading to p-type conduction. Furthermore, an InSe-based inverter and complementary logic gates ("NAND" and "NOR") were fabricated. Finally, an InSe-based p-n homojunction exhibits a high forward-to-reverse current ratio (<i>I</i><sub>F</sub>/<i>I</i><sub>R</sub> > 10<sup>6</sup>) and self-powered photodetection with specific detectivity above 10<sup>12</sup> Jones. This work provides a fundamental demonstration of reversible channel-type engineering in layered semiconductors, offering potential pathways for future developments in reconfigurable electronics.
Authors
- Jing Cheng (ORCID: https://orcid.org/0000-0003-2621-8166)
- Liyan Shang (ORCID: https://orcid.org/0000-0003-2341-3978)
- Zhaotan Gao
- Hongzhi Guo
- Jinzhong Zhang (ORCID: https://orcid.org/0000-0003-1511-4281)
- Zhigao Hu (ORCID: https://orcid.org/0000-0003-0575-2191)
- Minqian Mao (ORCID: https://orcid.org/0000-0003-4392-4425)
- Shijing Gong (ORCID: https://orcid.org/0000-0002-9292-7609)
- Junhao Chu
- Zian Hong
- Ruiqi Jiang (ORCID: https://orcid.org/0000-0003-3164-6990)
- Mengjiao Li (ORCID: https://orcid.org/0000-0003-4801-560X)
- Z. Li
- Zhi Yuan Cheng
Institutions
- Shanghai University (CN)
- Shanxi University (CN)
- NeoPhotonics (United States) (US)
- Shanghai Institute of Technical Physics (CN)
- Shanxi University of Traditional Chinese Medicine (CN)
- Infrared Laboratories (United States) (US)
- State Key Laboratory of Infrared Physics
- East China Normal University (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-08-25
- DOI
- https://doi.org/10.1021/acs.nanolett.5c03444
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- National Natural Science Foundation of China
- Science and Technology Commission of Shanghai Municipality
- East China Normal University
- Natural Science Foundation of Henan Province
- Nanyang Institute of Technology
- National Key Research and Development Program of China
- Key Scientific Research Project of Colleges and Universities in Henan Province