Simulation and Comparison of Single Gate Mosfet and Novel Double Gate Mosfet to Improve the Quantum Capacitance

The aim of this article is to improve quantum capacitance with simulation and comparison of single gate MOSFET and novel double gate MOSFET by varying the gate insulator thickness in the nanohub simulation tool. The single gate MOSFET (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{n} \boldsymbol{=} \mathbf{2 0}$</tex>) was compared with the novel double gate MOSFET (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{n} \boldsymbol{=} \mathbf{2 0}$</tex>) by varying the gate insulator thickness with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{4 0}$</tex> samples. The calculation is performed by utilizing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$G$</tex> power 0.8, alpha 0.05, and beta 0.2 with a confidence interval at 95 % in the NANOHUB simulation environment by using the FETTOY simulation tool. Novel double gate MOSFET is significantly high quantum capacitance (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2.4 \mathrm{e}-05$</tex>) than single gate MOSFET (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.97 \mathrm{e}-05$</tex>) with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{P}=0.001(P&lt;0.05)$</tex>. The gate insulator thickness with maximum drain current is 1.8 nm for single gate MOSFET and 1.8 nm for Novel double Gate MOSFET. In this study, novel double-gate MOSFET with gate insulator thickness of 1.8 nm is significantly better than single gate MOSFET.