ON METHODS OF FORMING CONTACTS ON SiO2/Si SYSTEMS WITH ION TRACKS FILLED WITH Ni AND Cu NANOCLUSTERS

The paper considers the advantages and disadvantages of various methods for forming contacts on SiO2/Si systems with ion tracks filled with nanoclusters of ferromagnetic and non-magnetic metals, presents a scheme for measuring the current-voltage characteristic (CVC) of the samples under study, and analyzes magnetoresistance under different external conditions (temperature, external magnetic field) in SiO2-Si systems with nanopores and Cu and Ni nanoparticles. The temperature dependence of positive magnetoresistance is established, which practically disappears at temperatures above 150 K.