MATHEMATICAL MODEL FOR CALCULATING THE FAILURE CROSS-SECTION OF MICROCIRCUITS UNDER PROTON RADIATION EXPOSURE

A mathematical model is proposed to estimate the failure cross-section of integrated circuits exposed to high-energy cosmic protons. The model takes into account the sensitive volume geometry, proton energy spectrum, nuclear interaction probability, and energy deposition from secondary particles. Analytical expressions for the rate of single event effects are derived. Graphical dependencies illustrating the effect of microcircuit parameters on radiation resistance are presented, as well as an analysis of the sensitivity of the model to changes in input data.