Transistor-Structured Artificial Dendrites for Spatiotemporally Correlated Reservoir Computing

Neuromorphic electronics, which integrate sensing, storage, and computing to boost efficiency and performance, offer a low-cost, energy-efficient alternative for temporal data processing with edge computing potential when applied to reservoir computing (RC). However, current neuromorphic RC systems struggle with diverse spatial information inputs due to device design limits. Here, we present the first artificial dendrite horizontally cascaded by Ga-Sn-O (GTO)-based synaptic transistors with efficient electron-ion coupled films as the gate dielectric. This design allows unlimited lateral gate expansion, source/drain and gate interchangeability, and sustains a microampere-level output current across a record centimeter-scale gate-channel distance. The artificial dendrite maintains stable weight modulation through <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{\mathbf {{5}}}$ </tex-math></inline-formula> electrical cycles and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{\mathbf {{7}}}$ </tex-math></inline-formula> bending cycles, with performance restorable via dielectric film replacement. This work pioneers the demonstration of spatiotemporally correlated reservoir computing using artificial dendrites-based RC systems, achieving highly accurate recognition and introducing a new paradigm to the field.