High-responsivity dielectric metasurface Si-based InGaAs photodetector
We demonstrate Si-based InGaAs/InP Multiple Quantum Well (MQW) photodetectors integrated with a dielectric metasurface (DM) structure, achieving 11.8 times photocurrent enhancement and 4.65 times responsivity improvement compared to conventional devices. FDTD simulations reveal optimized light-matter interactions within the DM structure, correlating with experimental observation. The devices exhibit a low dark current of 9 × 10<sup>-3</sup> μA and superior linearity in the photoelectric response curve, validating their potential for high-performance near-infrared detection.
Authors
- Zhiyong Duan
- Yifan Liu
- Mengke Li (ORCID: https://orcid.org/0000-0002-5038-6015)
- Yujie Wu (ORCID: https://orcid.org/0000-0001-7479-1544)
- Liuhong Ma (ORCID: https://orcid.org/0000-0003-1612-668X)
Institutions
- Zhengzhou University (CN)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1364/ol.571713
- Primary Topic
- Metamaterials and Metasurfaces Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Key Laboratory of Engineering Dielectrics and Its Application (Harbin University of Science and Technology), Ministry of Education