Photo-Induced Birefringence in Layered Composite Materials Based on Ge–Te–In and Azo Polymer Prepared Through Different Methods

Bulk chalcogenides from the system (GeTe₄)_1-xIn_x, where x = 0; 5 and 10 mol%, were synthesized by a two-step melt quenching technique. New layered composite materials based on them and the azo polymer [1-4-(3-carboxy-4-hydrophenylazo) benzensulfonamido]-1,2-ethanediyl, sodium salt] has been prepared through spin coating, electrospray deposition and via vacuum-thermal evaporation of the chalcogenide and spin coating of the azo polymer onto it. Using the latter technology, a material consisting of one chalcogenide and one azo polymer film and three chalcogenide and three azo polymer films has been fabricated. The carried-out SEM analysis shows that in the materials, initially prepared as a bilayer and multilayer structure, diffusion at the chalcogenide/polymer interface occurs leading to the formation of a homogenous composite environment. Birefringence was induced at 444 nm in all the fabricated thin film materials. The highest value of the maximal induced birefringence has been measured for the material fabricated as a stack, Δn_max = 0.118. For the material prepared as a bilayer structure and the composite material obtained through electrospray deposition, the maximal induced birefringence takes values of Δn_max = 0.101 and Δn_max = 0.095, respectively. The sample prepared via spin coating of the chalcogenide/PAZO dispersion has the lowest value of the maximal induced birefringence (Δn_max = 0.066) in comparison to the pure PAZO polymer film (Δn_max = 0.083).