Study on the impact resistance performance of a new type of gated photomultiplier tube

This study investigates the impact resistance performance of a novel gated photomultiplier tube (PMT) with a focus on its core vulnerable components: the quartz glass photocathode, ceramic insulating support rods, and lead glass microchannel electron multiplier (MCP). Utilizing the finite element method (FEM) via Ansys software, a mechanical property calculation model was developed based on the surface element FEM. Simulation results indicate that under a 30g impact, the maximum stress on the cathode, MCP, and ceramic support rods remains below the plastic deformation threshold (0.857 MPa), while the maximum displacement of core components (1.568×10^-2 mm) is significantly less than the allowable assembly error (0.05 mm), ensuring structural and functional integrity. Further simulations reveal the PMT's impact resistance limit to be 45g. Experimental validation was conducted using a vibration table capable of generating half-sine wave impacts at 30g in both vertical (Z-axis) and horizontal (X-axis) orientations. Post-impact analysis showed no visible abnormalities, with key performance parameters—anode output photocurrent, anode output dark current, anode sensitivity, and gating establishment time (50 ns)—remaining unchanged. These findings confirm the PMT's impact resistance capability of at least 30g in both orientations. This research provides a robust methodology for evaluating PMT anti-shock performance, offering a theoretical foundation for shock environmental conditions and supporting future structural design advancements in PMT development.