120 A/1.78 kV p-Cr₂O₃/n-β -Ga₂O₃ Heterojunction PN Diodes With Slanted Mesa Edge Termination

In this study, we demonstrate large-area, high-performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3-based heterojunction PN diodes (PNDs) featuring a p-type chromium oxide (p-Cr2<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {O}}_{{3}}\text {)}$ </tex-math></inline-formula> layer deposited via magnetron sputtering and an optimized slanted-mesa edge termination (ET) for electric field management. The fabricated diodes exhibit an active area of 9 mm2 and achieve state-of-the-art electrical characteristics, including a high breakdown voltage (BV) of 1.78 kV, a forward current (IF) of 120 A, and an ultralow on-resistance (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {R}}_{\text {on}}\text {)}$ </tex-math></inline-formula> of 69 m<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>. Notably, the slanted-mesa-ET PNDs show only a marginal reduction in forward current compared to their non-ET counterparts, while achieving a 36% enhancement in BV. This results in a power figure of merit (PFOM) of 0.511 GW/cm2, the highest reported to date for any large-area (>1 mm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{{2}}\text {)} \beta $ </tex-math></inline-formula>-Ga2O3 diode. This exceptional performance underscores the viability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 for next-generation high-power electronics, particularly through the introduction of novel p-type materials and edge termination designs.