Cryogenic 1/2-λ Cavity VCSEL With 5-μm Aperture Demonstrates Record P<sub>out</sub> = 35 mW and 140 Gbps PAM-4 Optical Link at 2.9 K

High-power and high-speed cryogenic vertical-cavity surface-emitting lasers with a 1/2-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula> cavity and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5.0~\mu $ </tex-math></inline-formula>m oxide-aperture are designed and fabricated. By strategically etching down five top p-doped DBR pairs while preserving low threshold current (I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\mathrm {th}} =1.54$ </tex-math></inline-formula> mA), the device achieves an unprecedented output power of 35 mW and supreme linearity at 2.9 - 77 K for high-speed, power-efficient optical interconnects. The device also achieves sub-picosecond photon lifetime and bandwidth exceeding 50 GHz at 2.5 mA, enabling 140 Gb/s PAM-4 cryogenic optical interconnect.

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Publication Details

Journal
IEEE Photonics Technology Letters
Published
2025-08-14
DOI
https://doi.org/10.1109/lpt.2025.3598825
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Cryogenic 1/2-λ Cavity VCSEL With 5-μm Aperture Demonstrates Record Pout = 35 mW and 140 Gbps PAM-4 Optical Link at 2.9 K

Zetai Liu, Haonan Wu, M. Feng, Yulin He et al.
IEEE Photonics Technology Letters
Semiconductor Lasers and Optical Devices
article

Cryogenic 1/2-λ Cavity VCSEL With 5-μm Aperture Demonstrates Record Pout = 35 mW and 140 Gbps PAM-4 Optical Link at 2.9 K

Zetai Liu, Haonan Wu, M. Feng, Yulin He, Derek Chaw
article en

Abstract

High-power and high-speed cryogenic vertical-cavity surface-emitting lasers with a 1/2-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula> cavity and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5.0~\mu $ </tex-math></inline-formula>m oxide-aperture are designed and fabricated. By strategically etching down five top p-doped DBR pairs while preserving low threshold current (I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\mathrm {th}} =1.54$ </tex-math></inline-formula> mA), the device achieves an unprecedented output power of 35 mW and supreme linearity at 2.9 - 77 K for high-speed, power-efficient optical interconnects. The device also achieves sub-picosecond photon lifetime and bandwidth exceeding 50 GHz at 2.5 mA, enabling 140 Gb/s PAM-4 cryogenic optical interconnect.

IEEE Photonics Technology LettersVol. 37(23)
University of Illinois Urbana-Champaign (US)
Army Research Office
Affordable and clean energy
Openalex Percentile: Top 79%
Semiconductor Lasers and Optical Devices
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