Deterministic Quantum Emitters Generation in Hexagonal Boron Nitride

Hexagonal boron nitride (hBN) has attracted considerable interest as a host for quantum emitters (QEs), which are critical for quantum information technologies [1]. Its wide bandgap enables the engineering of optically active defects, producing emission wavelengths from UV to near-infrared and operating at room temperature. Recent research has also uncovered that some defects in hBN exhibit optically addressable spins, broadening their application potential [2]. The ideal QE fabrication method aims to produce isolated emitters on-demand at specific locations. However, achieving site-specific fabrication remains challenging, with current techniques such as e-beam lithography, mechanical deformation, and irradiation requiring sophisticated equipment, high temperatures, and complex processes [3], [4]. These methods can limit integration with photonic devices due to their dependence on pre-patterning or high-vacuum conditions. In this work, we present a single-step, high-yield fabrication technique to induce defects at predefined locations without additional pre-/post-treatment, overcoming future integration issues typically associated with such steps [5].