Enhancing Photon Outcoupling from Metasurface-Embedded Single Quantum Emitters

Solid state quantum emitters (QEs), such as epitaxial quantum dots (QDs), tend to exhibit low overall efficiencies due to low outcoupling and poor emission directivity. Various methods have been developed to mitigate these issues, however they often rely on high levels of precision in nanofabrication combined with multiple aligned lithography rounds, severely limiting scalability. Alternatively, Mie metasurfaces have been demonstrated as a promising platform for enhancing emission from QEs, while providing resilience against uncertainty in QE locations and reducing the need for high-precision alignment [1]. Here we discuss the effect of Mie metasurface design on the efficiency of photon outcoupling from solid-state QEs. We focus on the fundamental electric dipole modes (Fig. 1a), with the first metasurface design (MS1) employing a mode with the in-plane dipole orientation (for QEs with in-plane dipole moments) and the second design (MS2) with the out-of-plane dipole orientation [2]. We also discuss tuning of QDs embedded in dielectric metasurfaces.