Ultrafast Carrier Dynamics in HgPSe<sub>3</sub>

Two-dimensional (2D) van der Waals (vdW) materials have garnered significant interest due to their unique properties, including strong light-matter interactions and enhanced excitonic effects [1]. Among these, layered vdW metal phosphorus trichalcogenides <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{MPX}_{3})$</tex> represent a fascinating class of perovskites, exhibiting peculiar magnetic, optoelectronic, and optical properties, with bandgap ranging from 1.3 to 3.5 eV [2], [3]. HgPSe3, is a vdW semiconductor with an optical gap near 2 eV at room temperature, characterized by high sensitivity to X-rays, effective responsivity in the visible spectrum and fast response times, positioning it as a promising candidate for fast broadband light detection [4], [5]. However, while its static optical properties are well studied, the material's non-equilibrium optical behavior remains unexplored.

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Published
2025-06-23
DOI
https://doi.org/10.1109/cleo/europe-eqec65582.2025.11110521
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Ultrafast Carrier Dynamics in HgPSe3

Nikolas Antonatos, Christoph Gadermaier, Antonella Treglia, Annamaria Petrozza et al.
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Chalcogenide Semiconductor Thin Films
article

Ultrafast Carrier Dynamics in HgPSe3

Nikolas Antonatos, Christoph Gadermaier, Antonella Treglia, Annamaria Petrozza, Alessandro Baserga, Giulio Cerullo, M. Bertolotti, Valentino Jadriško, Cosimo D’Andrea, Giulia Folpini, Stefano Dal Conte, Zdeněk Sofer, Samim Sardar, Giuseppe Parternò
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Abstract

Two-dimensional (2D) van der Waals (vdW) materials have garnered significant interest due to their unique properties, including strong light-matter interactions and enhanced excitonic effects [1]. Among these, layered vdW metal phosphorus trichalcogenides <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{MPX}_{3})$</tex> represent a fascinating class of perovskites, exhibiting peculiar magnetic, optoelectronic, and optical properties, with bandgap ranging from 1.3 to 3.5 eV [2], [3]. HgPSe3, is a vdW semiconductor with an optical gap near 2 eV at room temperature, characterized by high sensitivity to X-rays, effective responsivity in the visible spectrum and fast response times, positioning it as a promising candidate for fast broadband light detection [4], [5]. However, while its static optical properties are well studied, the material's non-equilibrium optical behavior remains unexplored.

Italian Institute of Technology (IT), AGH University of Krakow (PL), University of Chemistry and Technology, Prague (CZ), Politecnico di Milano (IT)
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Chalcogenide Semiconductor Thin Films
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Ultrafast Carrier Dynamics in HgPSe<sub>3</sub> — Nikolas Antonatos, Christoph Gadermaier, et al. · (2025) | TGRS Research Map | TGRS