Etching-Free Rare-Earth-Doped Al<sub>2</sub>O<sub>3</sub> and Y<sub>2</sub>O<sub>3</sub> Micro-Devices Made by Pulsed Laser Deposition and Lift-Off
The realization of rare-earth-doped integrated optical devices is crucial for the making of amplifiers, lasers on chip and quantum photonics. [1], [2] Rare-earth-doped yttria and alumina materials are highly promising for such application thanks to their high solubility of rare-earth ions and their excellent transparency in visible and infrared.[3], [4] However, structuring and integration remain particularly challenging for chemically and mechanically robust materials like alumina or yttria. [5] For such materials, etching-based processes are challenging, costly and degrade performance.[6] In this paper, we present an innovative etching-free process based on Pulsed Laser Deposition (PLD) and lift-off for the fabrication of rare-earth doped waveguides, rings and photonic crystals.
Authors
- Alban Gassenq
- Y. Guyot (ORCID: https://orcid.org/0000-0001-7802-8167)
- António B. Pereira (ORCID: https://orcid.org/0000-0001-8342-5116)
- Hai Son Nguyen (ORCID: https://orcid.org/0000-0002-1638-2272)
- Christian Seassal (ORCID: https://orcid.org/0000-0002-3856-9089)
- Régis Orobtchouk (ORCID: https://orcid.org/0000-0002-6209-3017)
- Antoine Bernard (ORCID: https://orcid.org/0009-0002-5050-4701)
- Damien Rinnert
Institutions
- Université Claude Bernard Lyon 1 (FR)
- Centre National de la Recherche Scientifique (FR)
- Institut des Nanotechnologies de Lyon (FR)
- Institut Lumière Matière (FR)
Publication Details
- Published
- 2025-06-23
- DOI
- https://doi.org/10.1109/cleo/europe-eqec65582.2025.11110650
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00