Low-Loss Strip-Loaded SiN Waveguides on Engineered AlN for Quantum Photonic Applications

Integrated photonics based on silicon has attracted great interest for its potential to provide compact and efficient solutions for functional devices. However, silicon suffers of several limitations, including a low indirect bandgap of 1.1 eV and negligible second-order nonlinear optical properties, which hinder the realization of low loss electro-optic modulators and second-order nonlinear processes.

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Published
2025-06-23
DOI
https://doi.org/10.1109/cleo/europe-eqec65582.2025.11111645
Primary Topic
Photonic and Optical Devices
Type
article
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article

Low-Loss Strip-Loaded SiN Waveguides on Engineered AlN for Quantum Photonic Applications

A. Gaggero, A Rengarajan, F. Mattioli, F. De Martini et al.
5 links
Photonic and Optical Devices
article

Low-Loss Strip-Loaded SiN Waveguides on Engineered AlN for Quantum Photonic Applications

A. Gaggero, A Rengarajan, F. Mattioli, F. De Martini, É. Verona, Francesco Conidi
article en

Abstract

Integrated photonics based on silicon has attracted great interest for its potential to provide compact and efficient solutions for functional devices. However, silicon suffers of several limitations, including a low indirect bandgap of 1.1 eV and negligible second-order nonlinear optical properties, which hinder the realization of low loss electro-optic modulators and second-order nonlinear processes.

Istituto di Fotonica e Nanotecnologie (IT)
Affordable and clean energy
Openalex Percentile: Top 79%
Photonic and Optical Devices
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