Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Abstract Drive-in diffusion of Mg implanted into GaN during ultra-high pressure annealing leads to low surface acceptor concentrations. This favors p-type Schottky contact formation, which severely increases the on-state resistance of Mg-implanted GaN pn diodes (PNDs). This work aims to reduce the resistance of contacts to Mg-implanted p-GaN by incorporating Mg deposition and annealing into the contact stack, achieving a rectification ratio (RR) over 10 12 , a current density above 1 kA cm −2 and a record-low differential specific on-resistance ( R ON ) of 0.65 mΩ.cm 2 in Mg-implanted PNDs, offering a potential solution for improving the performance and manufacturability of vertical GaN devices that require contacts to Mg-implanted p-GaN.

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Publication Details

Journal
Applied Physics Express
Published
2025-08-15
DOI
https://doi.org/10.35848/1882-0786/adfc26
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

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Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Pramod Reddy, Spyridon Pavlidis, Md. Azizul Hasan, Seiji Mita, Matthew Alessi, Tomasz Sochacki, Will Mecouch, Kacper Sierakowski, Dolar Khachariya, Zlatko Sitar, Michał Boćkowski, Ramón Collazo, E. Kohn
article en

Abstract

Abstract Drive-in diffusion of Mg implanted into GaN during ultra-high pressure annealing leads to low surface acceptor concentrations. This favors p-type Schottky contact formation, which severely increases the on-state resistance of Mg-implanted GaN pn diodes (PNDs). This work aims to reduce the resistance of contacts to Mg-implanted p-GaN by incorporating Mg deposition and annealing into the contact stack, achieving a rectification ratio (RR) over 10 12 , a current density above 1 kA cm −2 and a record-low differential specific on-resistance ( R ON ) of 0.65 mΩ.cm 2 in Mg-implanted PNDs, offering a potential solution for improving the performance and manufacturability of vertical GaN devices that require contacts to Mg-implanted p-GaN.

Applied Physics ExpressVol. 18(9)
North Carolina State University (US), Institute of High Pressure Physics (PL), Adroit Materials (United States) (US)
National Science Foundation, North Carolina State University, Novo Nordisk Fonden, Advanced Research Projects Agency - Energy, Advanced Research Projects Agency, Narodowe Centrum Badań i Rozwoju, Office of Naval Research, Division of Electrical, Communications and Cyber Systems
Affordable and clean energy
Openalex Percentile: Top 86%
GaN-based semiconductor devices and materials
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