Perfectly Vertical Coupling with High-Efficiency Bi-Layer Grating Coupler for Thin Film SiN Technology

Thin-film Silicon Nitride (TFSiN) platforms are gaining increasing interest in the integrated optics community due to their broad transparency range and low propagation loss [1]. However, the limited thickness of the waveguides (typically from 40 nm to 200 nm) poses a number of challenges, especially when it comes to light coupling between on-chip structures and optical fibers. Indeed, the low index contrast between the TFSiN waveguides and the surrounding silicon dioxide makes the design of efficient grating couplers (GCs) challenging.

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Publication Details

Published
2025-06-23
DOI
https://doi.org/10.1109/cleo/europe-eqec65582.2025.11110562
Primary Topic
Photonic and Optical Devices
Type
article
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article

Perfectly Vertical Coupling with High-Efficiency Bi-Layer Grating Coupler for Thin Film SiN Technology

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Photonic and Optical Devices
article

Perfectly Vertical Coupling with High-Efficiency Bi-Layer Grating Coupler for Thin Film SiN Technology

Cosimo Lacava, Ilaria Cristiani, Frédéric Y. Gardes, Valerio Vitali, Thalía Domínguez Bucio, F. Croce, Periklis Petropoulos, Hao Liu, Anna Pennoni
article en

Abstract

Thin-film Silicon Nitride (TFSiN) platforms are gaining increasing interest in the integrated optics community due to their broad transparency range and low propagation loss [1]. However, the limited thickness of the waveguides (typically from 40 nm to 200 nm) poses a number of challenges, especially when it comes to light coupling between on-chip structures and optical fibers. Indeed, the low index contrast between the TFSiN waveguides and the surrounding silicon dioxide makes the design of efficient grating couplers (GCs) challenging.

University of Pavia (IT), University of Southampton (GB)
Affordable and clean energy
Openalex Percentile: Top 79%
Photonic and Optical Devices
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