Power Scaling of Single Frequency 2 μm GaSb-Based VECSEL

The (AlGaIn)(AsSb) materials system has been shown to be ideally suited to realize vertical external cavity surface emitting lasers (VECSEL) for the 1.9 – 2.8 μm wavelength range. Narrow-linewidth, tunable laser sources in this wavelength range are of special interest for a range of applications such as gas analysis, remote sensing, LIDAR, optical free-space communication, laser seeding as well as for quantum optical experiments.

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Publication Details

Published
2025-06-23
DOI
https://doi.org/10.1109/cleo/europe-eqec65582.2025.11110715
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
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Power Scaling of Single Frequency 2 μm GaSb-Based VECSEL

Andreas Bächle, Elke Diwo-Emmer, Marcel Rattunde, P. Holl et al.
Semiconductor Lasers and Optical Devices
article

Power Scaling of Single Frequency 2 μm GaSb-Based VECSEL

Andreas Bächle, Elke Diwo-Emmer, Marcel Rattunde, P. Holl, Steffen Adler
article en

Abstract

The (AlGaIn)(AsSb) materials system has been shown to be ideally suited to realize vertical external cavity surface emitting lasers (VECSEL) for the 1.9 – 2.8 μm wavelength range. Narrow-linewidth, tunable laser sources in this wavelength range are of special interest for a range of applications such as gas analysis, remote sensing, LIDAR, optical free-space communication, laser seeding as well as for quantum optical experiments.

Fraunhofer Institute for Applied Solid State Physics (DE)
Affordable and clean energy
Openalex Percentile: Top 79%
Semiconductor Lasers and Optical Devices
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