Optoelectronic Nanowire Neuron

Three different semiconductor nanowires are combined into a single optoelectronic artificial neuron. Our device provides a path towards low power computations with significantly reduced circuit footprint, thus addressing critical limitations in neuromorphic photonics. The false-coloured scanning electron micrograph shown in Figure 1a depicts the fabricated nanowire neuron. Two pin-doped InP nanowires, acting as photodiodes, are connected to an InAs nanowire field-effect transistor (FET); dashed box in Fig. 1a. Since the cathode of one photodiode is connected to the anode of the other via a metal lead, illumination of either will generate charge carriers of opposite charge which are summed across the lead, with the net charge modulating the InAs conductance via the FET. Here, the device is characterized using an optical beam induced current setup.