Enhancing the Luminescence of Mos2 Using an Epsilon-Near-Zero Underlayer

Transition metal di-chalcogenides have gained strong interest for their optical properties which are important for advanced device engineering. This work proposes a new strategy to leverage emission from monolayer Mos2 using an epsilon-near-zero underlayer.

Authors

J. Mitra (ORCID: https://orcid.org/0000-0002-6633-9862)
Sraboni Dey (ORCID: https://orcid.org/0000-0003-3344-6458)
Renjith Nadarajan

Institutions

Indian Institute of Science Education and Research Thiruvananthapuram (IN)

Publication Details

Published: 2025-06-23
DOI: https://doi.org/10.1109/cleo/europe-eqec65582.2025.11111334
Primary Topic: 2D Materials and Applications
Type: article
Field-Weighted Citation Impact: 0.00

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article

Enhancing the Luminescence of Mos2 Using an Epsilon-Near-Zero Underlayer

J. Mitra, Sraboni Dey, Renjith Nadarajan

Jun 23, 2025

3 links

2D Materials and Applications

article

Enhancing the Luminescence of Mos2 Using an Epsilon-Near-Zero Underlayer

J. Mitra, Sraboni Dey, Renjith Nadarajan

June 23, 2025article en

Abstract

Indian Institute of Science Education and Research Thiruvananthapuram (IN)

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2D Materials and Applications

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Enhancing the Luminescence of Mos2 Using an Epsilon-Near-Zero Underlayer — J. Mitra, Sraboni Dey, et al. · (2025) | TGRS Research Map | TGRS