Supercontinua in dispersion Engineered Gallium Nitride Waveguides
Gallium nitride (GaN) is a promising material for nonlinear optics. It offers a second-order nonlinearity up to 20 pm/V and a third-order nonlinearity that is one order of magnitude higher than in silicon nitride at 1550 nm [1], [2]. Owing to its large bandgap of 3.4 eV GaN has a wide transparency range and is free of two-photon and three-photon absorption in the technologically important erbium-gain window. Recent advances have explored integrated GaN waveguide as a new platform for integrated photonics, demonstrating second-harmonic generation, four-wave mixing, soliton generation [2]–[4], supercontinuum generation and chip-based f-2f interferometry [5].
Authors
- Ivo Arabadzhiev (ORCID: https://orcid.org/0009-0005-8457-1955)
- Weichen Fan
- Thibault Wildi (ORCID: https://orcid.org/0000-0002-0193-7132)
- Markus Ludwig (ORCID: https://orcid.org/0000-0002-2109-163X)
- Tobias Herr (ORCID: https://orcid.org/0000-0002-5966-6697)
- Ian Rousseau (ORCID: https://orcid.org/0000-0002-9305-7721)
- Bastian Ruhnke
Institutions
- Deutsches Elektronen-Synchrotron DESY (DE)
- Hexis (Switzerland) (CH)
Publication Details
- Published
- 2025-06-23
- DOI
- https://doi.org/10.1109/cleo/europe-eqec65582.2025.11111239
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Research Council
- HORIZON EUROPE European Innovation Council