Implementation of a Spurious Solution Free 8-band k.p Model for the Identification of Absorption Spectra of InAs Quantum Dots Grown on GaAs

Despite QD devices presenting a reduced threshold current density, improved device lifetime, and their insensitivity to defects, which enables monolithic growth on silicon [1], they have yet to have a commercial impact. A potential reason for this delay is the lack of a reliable model that can be used to simulate the functionality of QD based devices, prior to fabrication. Such models exist for structures based on e.g. QWs and have significantly facilitated the fabrication of state-of-the-art photonic devices. The final aim of this research is to implement a similar easy-to-use model for QD based photonic devices.